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A multi-state memory device based on the unidirectional spin Hall magnetoresistance

Start: Tuesday, July 10, 2018   03:30pm            Place: Lecture Hall

JAS – 1

 A multi-state memory device based
on the unidirectional spin Hall magnetoresistance

Can Onur Avci et al.
Applied Physics Letters(Appl. Phys. Lett.
110, 203506 (2017))

By

Mr. Subir Roy

On

Tuesday, 10 July 2018

Time: 03.30 P.M.

Venue: Lecture Hall