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DTSTART:20180428T153000
RDATE:20380119T071407
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UID:e70b5455f5e7b4ebb84357924943c1c1
CATEGORIES:Outside Cens Colloquium
CREATED:20190426T084028
SUMMARY:How the Trap States Affect Charge Carrier Dynamics of Semiconductor Quantum Dots
LOCATION:Lecture Hall
DESCRIPTION;ENCODING=QUOTED-PRINTABLE:<p style="text-align: center;"><strong><span style="font-size: 12pt;">Collo
 quium</span></strong></p><p style="text-align: center;">on<br /><span style
 ="font-size: 12pt;"><strong>How the Trap States Affect Charge Carrier Dynam
 ics of Semiconductor</strong></span><br /><span style="font-size: 12pt;"><s
 trong>Quantum Dots</strong></span></p><p style="text-align: center;">By</p>
 <p style="text-align: center;"><span style="font-size: 12pt;"><strong>Prof.
  K. George Thomas</strong></span><br /><span style="font-size: 10pt;">Schoo
 l of Chemistry,</span><br /><span style="font-size: 10pt;">IISER-TVM, Thiru
 vananthapuram</span></p><p style="text-align: center;">On</p><p style="text
 -align: center;"><span style="font-size: 10pt;">Monday, 29 April 2019</span
 ></p><p style="text-align: center;"><span style="font-size: 10pt;">Time: 03
 .30 P.M.</span></p><p>&nbsp;</p><p style="text-align: center;">		<div class
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	</p> This event was imported from: https://cens
 .res.in/hi/about-us/people/eventdetail/214/-/how-the-trap-states-affect-cha
 rge-carrier-dynamics-of-semiconductor-quantum-dots?tmpl=component
X-EXTRAINFO:                                 Abstract :\nQuantum confinement effects in
  semiconductor nanocrystals allowed newer possibilities in tuning their phy
 sical properties by varying the size and shape. Photoexcitation of semicond
 uctor quantum dots can generate a bound\nelectron hole pair called exciton.
  The first part of the talk will provide an overview on various approaches 
 for tuning the excitonic emission in II-VI and III-V semiconductor quantum 
 dots. The second part of the talk will highlight our recent efforts to unde
 rstand the trap states in semiconductor quantum dots. The depth of surface 
 trap states in\nsemiconductor quantum dots (QDs) is influenced by the degre
 e of covalency, which in turn affect the charge recombination process in hy
 brid donor-acceptor systems. By taking relatively ionic cadmium selenide (C
 dSe) QDs with shallow trap states and covalent indium phosphide (InP) QDs\n
 having deep trap states as examples, the charge transfer dynamics are explo
 red using viologen derivative as an electron acceptor. Light-induced electr
 on transfer in a 1:1 stoichiometric complex of both the donor-acceptor syst
 ems occurs in picosecond timescale. The presence of deep hole trap states i
 n InP QDs retards the charge recombination to\nsub-millisecond timescale, w
 hich is seven orders of magnitude lower than that in CdSe QDs in homogeneou
 s solutions. The immobile quenchers in the quenching sphere of InP further 
 stabilize the electron transfer products to seconds through charge hopping 
 which extends the potential of these systems for charge transfer and transp
 ort applications in photovoltaics. More recently we have used InP QDs forva
 rious energy transfer application, particularly, probing the active domain 
 of Tau peptide and these aspects\nwill also be discussed.
DTSTAMP:20260407T163431Z
DTSTART;TZID=Indian/Mahe:20190429T153000
DTEND;TZID=Indian/Mahe:20190429T170000
SEQUENCE:0
TRANSP:OPAQUE
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