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CALSCALE:GREGORIAN
METHOD:PUBLISH
BEGIN:VTIMEZONE
TZID:Indian/Mahe
BEGIN:STANDARD
DTSTART:20171218T153000
RDATE:20380119T071407
TZOFFSETFROM:+0400
TZOFFSETTO:+0400
TZNAME:Indian/Mahe +04
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BEGIN:VEVENT
UID:2e72f791868338cdc66dffef1d77c503
CATEGORIES:Outside Cens Colloquium
CREATED:20181211T103226
SUMMARY:Colloquium: Nanoscale Materials by Atomic and Molecular Deposition
LOCATION:Lecture Hall
DESCRIPTION;ENCODING=QUOTED-PRINTABLE:Colloquium&nbsp;Nanoscale Materials by Atomic and Molecular Deposition&nbsp
 ;By&nbsp;Prof. Stacey F. BentDepartment of Chemical Engineering,Stanford Un
 iversity, Stanford , CA 94305 USA&nbsp;&nbsp;On&nbsp;Wednesday, 19 December
  2018&nbsp;Time: 03.30 P.M.&nbsp;Venue: Lecture Hall&nbsp;		
						        
             	          		          			          					            										
 																																																																			        
                   			          					            																											
 																																																		                         
  			          					            																																												
 																																	                        	                 
                	        										                            		
	 This eve
 nt was imported from: https://cens.res.in/en/about-us/people/eventdetail/20
 7/-/colloquium-nanoscale-materials-by-atomic-and-molecular-deposition?tmpl=
 component
DTSTAMP:20260413T003326Z
DTSTART;TZID=Indian/Mahe:20181219T153000
DTEND;TZID=Indian/Mahe:20181219T170000
SEQUENCE:0
TRANSP:OPAQUE
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