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TZID:Indian/Mahe
BEGIN:STANDARD
DTSTART:20171218T153000
RDATE:20380119T071407
TZOFFSETFROM:+0400
TZOFFSETTO:+0400
TZNAME:Indian/Mahe +04
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BEGIN:VEVENT
UID:2e72f791868338cdc66dffef1d77c503
CATEGORIES:Outside Cens Colloquium
CREATED:20181211T103226
SUMMARY:Colloquium: Nanoscale Materials by Atomic and Molecular Deposition
LOCATION:Lecture Hall
DESCRIPTION;ENCODING=QUOTED-PRINTABLE:<div style="text-align: center;"><strong><span style="font-size: 12pt;">Col
 loquium</span></strong></div><div style="text-align: center;">&nbsp;</div><
 div style="text-align: center;"></div><div style="text-align: center;"><spa
 n style="font-size: 12pt;"><strong>Nanoscale Materials by Atomic and Molecu
 lar Deposition</strong></span></div><div style="text-align: center;">&nbsp;
 </div><div style="text-align: center;">By</div><div style="text-align: cent
 er;">&nbsp;</div><div style="text-align: center;"><span style="font-size: 1
 2pt;"><strong>Prof. Stacey F. Bent</strong></span></div><div style="text-al
 ign: center;">Department of Chemical Engineering,</div><div style="text-ali
 gn: center;">Stanford University, Stanford , CA 94305 USA</div><div style="
 text-align: center;">&nbsp;</div><div style="text-align: center;">&nbsp;</d
 iv><div style="text-align: center;">On</div><div style="text-align: center;
 ">&nbsp;</div><div style="text-align: center;"><strong>Wednesday, 19 Decemb
 er 2018</strong></div><div style="text-align: center;">&nbsp;</div><div sty
 le="text-align: center;">Time: 03.30 P.M.</div><div style="text-align: cent
 er;">&nbsp;</div><div style="text-align: center;">Venue: Lecture Hall</div>
 <div>&nbsp;</div><div style="text-align: center;">		<div class="moduletable
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DTSTAMP:20260413T003623Z
DTSTART;TZID=Indian/Mahe:20181219T153000
DTEND;TZID=Indian/Mahe:20181219T170000
SEQUENCE:0
TRANSP:OPAQUE
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