BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//jEvents 2.0 for Joomla//EN
CALSCALE:GREGORIAN
METHOD:PUBLISH
BEGIN:VTIMEZONE
TZID:Indian/Mahe
BEGIN:STANDARD
DTSTART:20170709T153000
RDATE:20380119T071407
TZOFFSETFROM:+0400
TZOFFSETTO:+0400
TZNAME:Indian/Mahe +04
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
UID:80c57494e4e74b411c06afeec5c19192
CATEGORIES:JAS
CREATED:20180709T085234
SUMMARY:A multi-state memory device based on the unidirectional spin Hall magnetoresistance
LOCATION:Lecture Hall
DESCRIPTION;ENCODING=QUOTED-PRINTABLE:<p style="text-align: center;">JAS – 1</p><p style="text-align: center;"><s
 trong>&nbsp;A multi-state memory device based</strong><br /><strong>on the 
 unidirectional spin Hall magnetoresistance</strong></p><p style="text-align
 : center;">Can Onur Avci et al.<br />Applied Physics Letters(Appl. Phys. Le
 tt.<br />110, 203506 (2017))</p><p style="text-align: center;">By</p><p sty
 le="text-align: center;"><strong>Mr. Subir Roy</strong></p><p style="text-a
 lign: center;">On</p><p style="text-align: center;"><strong>Tuesday, 10 Jul
 y 2018</strong></p><p style="text-align: center;">Time: 03.30 P.M.</p><p st
 yle="text-align: center;">Venue: Lecture Hall</p> This event was imported f
 rom: https://cens.res.in/en/about-us/people/eventdetail/193/-/a-multi-state
 -memory-device-based-on-the-unidirectional-spin-hall-magnetoresistance?tmpl
 =component
DTSTAMP:20260413T153048Z
DTSTART;TZID=Indian/Mahe:20180710T153000
DTEND;TZID=Indian/Mahe:20180710T170000
SEQUENCE:0
TRANSP:OPAQUE
END:VEVENT
END:VCALENDAR